s3pdb61nxx three phase rectifier modules type S3PDB61N08 s3pdb61n12 s3pdb61n14 s3pdb61n16 s3pdb61n18 v rrm v 800 1200 1400 1600 1800 v rsm v 900 1300 1500 1700 1900 dimensions in mm (1mm=0.0394") symbol test conditions maximum ratings unit i dav i dav t c =100 o c, module t a =45 o c (r thca =0.6k/w), module 61 14 a t vj =45 o c t=10ms (50hz), sine v r =0 t=8.3ms (60hz), sine t vj =t vjm t=10ms(50hz), sine v r =0 t=8.3ms(60hz), sine 850 900 750 960 a i fsm t vj =45 o c t=10ms (50hz), sine v r =0 t=8.3ms (60hz), sine t vj =t vjm t=10ms(50hz), sine v r =0 t=8.3ms(60hz), sine 3600 3900 3000 3600 a 2 s i 2 t t vj t vjm t stg -40...+150 150 -40...+150 o c v isol 50/60hz, rms t=1min i isol <1ma t=1s 2500 3000 v~ m d mounting torque (m5) terminal connection torque (m5) _ 5 + 15% 5 + 15% nm _ _ weight typ. 160 g + - ~ ~ ~ p1 ?2008 sirectifier all rights reserved, tel: +86-519-86800000 fax: +86-519-88019019 e-mail: sales@sirectifier.com www.sirectifier.com
s3pdb61 three phase rectifier modules features * package with screw terminals * isolation voltage 3 000 v~ * blocking voltage up to 1800 v * low forward voltage drop advantages * easy to mount with two screws * space and weight savings * improved temperature and power cycling applications * supplies for dc power equipment * input rectifiers for pwm inverter * battery dc power supplies * field supply for dc motors symbol test conditions characteristic values unit v r =v rrm ; t vj =25 o c v r =v rrm ; t vj =t vjm < 0.3 < 5 ma v f i f =6 0a; t vj =25 o c < 1.25 v i r v to for power-loss calculations only 0.85 v r t t vj =t vjm 5 m per diode per module r thjc 0.96 0.16 k/w per diode per module r thjk 1.60 0.27 k/w d s creeping distance on surface 10 mm d a creepage distance in air 9.4 mm a max. allowable acceleration 50 m/s 2 _ _ _ p2 ?2008 sirectifier all rights reserved, tel: +86-519-86800000 fax: +86-519-88019019 e-mail: sales@sirectifier.com www.sirectifier.com
s3pdb61 t = 150c vj t = 25c vj 2 0.5 1.5 1 v [v] f 0 i f 50 100 200 150 [a] 0.4 0.6 0.8 1 1.2 1.4 1.6 10 0 10 1 10 2 10 3 t[ms] i (a) fsm tvj=45c tvj=150c 550 500 i ------ i fsm f(ov) 0 v rrm 1/2 v rrm 1 v rrm 2 4 6 10 tvj=45c tvj=150c t [ms] 1 10 10 10 2 3 4 as 2 fig. 1 forward current versus voltage drop per diode fig. 2 surge overload current per diode i fsm : crest value. t: duration fig. 3 i 2 dt versus time (1-10ms) per diode (or thyristor) 60 40 20 0 25 50 75 100 125 150 175 200 100 105 110 115 120 125 130 135 140 145 150 tc c dc sin.180 rec.120 rec.60 rec.30 2.76 1.26 0.76 0.51 0.38 0.26 = rthca [k/w] ifavm [a] tamb [k] 0 50 100 150 [w] pvtot fig. 4 power dissipation versus direct output current and ambient tem p erature 50 100 150 200 0 20 40 60 80 dc sin.180 rec.120 rec.60 rec.30 t (c) c i dav [a] fig.5 maximum forward current at case tem p erature 0.01 0.1 1 10 0.5 1 1.5 2 2.5 k/w z th t[s] z thjk z thjc fig. 6 transient thermal impedance per diode calculated p3 ?2008 sirectifier all rights reserved, tel: +86-519-86800000 fax: +86-519-88019019 e-mail: sales@sirectifier.com www.sirectifier.com
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